features special for automotive led/hid lamp for surface mounted application low profile package built-in strain relief ideal for automated placement easy pick and place superfast recovery time for high efficiency glass passivated chip junction high temperature soldering: 260 o c/10 seconds at terminals plastic material used carries underwriters laboratory classification 94v-0 mechanical data cases: molded plastic terminals: pure tin plated, lead free. polarity: indicated by cathode band packing: 12mm tape per eia std rs-481 weight: 0.093 gram maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number units maximum recurrent peak reverse voltage v rrm maximum rms voltage v rms maximum dc blocking voltage v dc maximum average forward rectified current see fig. 1 i (av) 8.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 125 a maximum instantaneous forward voltage @ 8.0a v f maximum dc reverse current @t a =25 o c at rated dc blocking voltage @ t a =100 o c i r 10 350 ua ua maximum reverse recovery time ( note 1 ) trr 35 ns typical junction capacitance ( note 2 ) cj 45 30 maximum thermal resistance (note 3) r ja r jl 75 20 o c/w operating temperature range t j -55 to +150 o c storage temperature range t stg -55 to +150 o c notes: 1. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 2. measured at 1 mhz and applied v r =4.0 volts 3. units mounted on p.c.b. 0.4? x 0.4? (10mm x 10mm) pad areas pf sm c / do-214ab unit : inc h ( m m ) ) 5 7 . 2 ( 8 0 1 . ) 5 2 . 3 ( 8 2 1 . ) 9 5 . 5 ( 0 2 2 . ) 2 2 . 6 ( 5 4 2 . .26 0 (6.60) .28 0 (7.11) .00 6 (.152) .01 2 (.305) .008(.203) .002(.051) .30 5 (7.75) .32 0 (8.13) .03 0 (0.76) .05 0 (1.27) ) 0 0 . 2 ( 9 7 0 . ) 2 6 . 2 ( 3 0 1 . 200 400 600 v 140 280 420 v 200 400 600 v symbol 0.98 1.3 1.7 v ES8D es8g es8j ? ES8D thru es8j pb free plating product ES8D thru es8j pb 8.0 ampere surface mount super fast recovery rectifiers ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 rev.02
fig.3- maximum non-repetitive peak forward surge current peak for ward surge current . (a) 1 10 100 125 80 40 20 0 100 60 number of cycles at 60hz 8.3ms single half sine wave (jedec method) at t =120 c l o fig.1- maximum forward current derating curve average for ward current . (a) 80 90 100 120 140 150 130 110 0 8.0 10.0 4.0 lead temperature. ( c) o resistive or inductive load 0.4x0.4"(10x10mm) copper pad areas 1 0 0 10 100 60 40 20 10 50 30 fig.4- typical junction capacitance junction cap acitance.(pf) reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 fig.2- typical reverse characteristics 0 20 40 60 80 100 120 140 10 100 1000 1 0.1 0.01 percent of rated peak reverse voltage. (%) tj=125 c 0 tj=85 c 0 tj=25 c 0 instantaneous reverse current .( a) fig.5- typical instantaneous forward characteristics instantaneous for ward current . (a) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 8 80 0.1 forward voltage. (v) tj=25 c pulse width-300 s 1% duty cycle 0 fig.6- reverse recovery time characteristic and test circuit diagram 50 noninductive non inductive oscilloscope (note 1) pulse generator (note 2) dut (+) 50vdc (approx) (-) notes: 1. rise time=7ns max. input impedance= 1 megohm 22pf 2. rise time=10ns max. sourse impedance= 50 ohms (-) (+) 10 noninductive -1.0a -0.25a 0 +0.5a trr 1cm set time base for 5/ 10ns/ cm ? ES8D thru es8j ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 rev.02
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